Impact of Polarity Mismatch in Infinite-Layer Nickelates.

The recent discovery of superconductivity in infinite-layer Sr-doped NdNiO2 grown on SrTiO3(001) provides a new platform to explore the conducting mechanism of unconventional superconductors. However, the electronic structure of infinite-layer nickelates remains controversial. In this paper, we systematically compare the structural and electronic properties of NdNiO2 films grown on SrTiO3 and LaAlO3 substrates using first-principles calculations. Our results show that the lattice reconstruction accompanied by electronic reconstruction occurs in nickelate films on both substrates. Although both heterostructures (HSs) are conducting at the interface, the SrTiO3-based HS shows distinct atomic displacement in the interfacial TiO2 layer and significant electron accumulation deep into three SrTiO3 layers below the interface, while the LaAlO3-based HS shows negligible atomic displacement and electron localization in the interfacial AlO2 layer, reflecting the impact of polarity mismatch on the electronic structure. Further, Wannier function calculations reveal that the interface stress has no obvious effect on the splitting energy and hopping integral between Ni 3d and Nd-layer orbitals. Although the hybridization between Ni 3dx2-y2 and Nd 5d orbitals is tiny, the hybridization between the Ni 3dx2-y2 orbital and an itinerant interstitial s (IIS) orbital is significantly strong in both cases, suggesting that the IIS orbital may play a critical role in the superconductivity of nickelates.

Critical role of hydrogen for superconductivity in nickelates.

The newly discovered nickelate superconductors so far only exist in epitaxial thin films synthesized by a topotactic reaction with metal hydrides1. This method changes the nickelates from the perovskite to an infinite-layer structure by deintercalation of apical oxygens1-3. Such a chemical reaction may introduce hydrogen (H), influencing the physical properties of the end materials4-9. Unfortunately, H is insensitive to most characterization techniques and is difficult to detect because of its light weight. Here, in optimally Sr doped Nd0.8Sr0.2NiO2H epitaxial films, secondary-ion mass spectroscopy shows abundant H existing in the form of Nd0.8Sr0.2NiO2Hx (x ≅ 0.2-0.5). Zero resistivity is found within a very narrow H-doping window of 0.22 ≤ x ≤ 0.28, showing unequivocally the critical role of H in superconductivity. Resonant inelastic X-ray scattering demonstrates the existence of itinerant interstitial s (IIS) orbitals originating from apical oxygen deintercalation. Density functional theory calculations show that electronegative H- occupies the apical oxygen sites annihilating IIS orbitals, reducing the IIS-Ni 3d orbital hybridization. This leads the electronic structure of H-doped Nd0.8Sr0.2NiO2Hx to be more two-dimensional-like, which might be relevant for the observed superconductivity. We highlight that H is an important ingredient for superconductivity in epitaxial infinite-layer nickelates.

Density-independent plasmons for terahertz-stable topological metamaterials.

To efficiently integrate cutting-edge terahertz technology into compact devices, the highly confined terahertz plasmons are attracting intensive attention. Compared to plasmons at visible frequencies in metals, terahertz plasmons, typically in lightly doped semiconductors or graphene, are sensitive to carrier density (n) and thus have an easy tunability, which leads to unstable or imprecise terahertz spectra. By deriving a simplified but universal form of plasmon frequencies, here, we reveal a unified mechanism for generating unusual n-independent plasmons (DIPs) in all topological states with different dimensions. Remarkably, we predict that terahertz DIPs can be excited in a two-dimensional nodal line and one-dimensional nodal point systems, confirmed by the first-principle calculations on almost all existing topological semimetals with diverse lattice symmetries. Besides n-independence, the feature of Fermi velocity and degeneracy factor dependencies in DIPs can be applied to design topological superlattice and multiwalled carbon nanotube metamaterials for broadband terahertz spectroscopy and quantized terahertz plasmons, respectively. Surprisingly, high spatial confinement and quality factor, also insensitive to n, can be simultaneously achieved in these terahertz DIPs. Our findings pave the way for developing topological plasmonic devices for stable terahertz applications.

Two-Dimensional Magnetic Anionic Electrons in Electrides: Generation and Manipulation.

Introducing magnetism to anionic electrons (AE) of electrides, especially for those confined in two-dimensional (2D) interlayer spaces, could provide a promising way to generate 2D spin-polarized free electron gas. However, the realization of this is challenging. Here, we propose a strategy for generating 2D magnetic AE, which requires two fundamental criteria, i.e., coexistence of localized AE (LAE) and delocalized AE (DAE) and a nearly half-filled LAE. Applying this to Y2C, the magnetism of 2D AE is tunable or sensitive to external strain, hole doping, and layer thickness, depending on the competition between atomic-orbital electrons, DAE, and LAE. Remarkably, a reversible on/off switching of magnetism can be achieved in bilayer Y2C by an electric field. Furthermore, the 2D magnetic AE in Y2C thin films are more robust against oxidation due to spatially selective hole doping effects. The manipulation of spin-polarized 2D AE gas paves a new way for designing spintronic devices with van der Waals magnets.

Anomalous Dirac Plasmons in 1D Topological Electrides.

The plasmon opens up the possibility to efficiently couple light and matter at subwavelength scales. In general, the plasmon frequency, intensity, and damping are dependent on the carrier density. These dependencies, however, are disadvantageous for stable functionalities of plasmons and render fundamentally a weak intensity at low frequency, especially for the Dirac plasmon (DP) widely studied in graphene. Here we demonstrate a new type of DP, emerging from a Dirac nodal-surface state, which can simultaneously exhibit a density-independent frequency, intensity, and damping. Remarkably, we predict the realization of anomalous DP (ADP) in 1D topological electrides, such as Ba_{3}CrN_{3} and Sr_{3}CrN_{3}, by first-principles calculations. The ADPs in both systems have a density-independent frequency and high intensity, and their frequency can be tuned from terahertz to midinfrared by changing the excitation direction. Furthermore, the intrinsic weak electron-phonon coupling of anionic electrons in electrides affords an added advantage of low-phonon-assisted damping and hence a long lifetime of the ADPs. Our Letter paves the way to developing novel plasmonic and optoelectronic devices by combining topological physics with electride materials.

Manipulate the Electronic and Magnetic States in NiCo2 O4 Films through Electric-Field-Induced Protonation at Elevated Temperature.

Ionic-liquid-gating- (ILG-) induced proton evolution has emerged as a novel strategy to realize electron doping and manipulate the electronic and magnetic ground states in complex oxides. While the study of a wide range of systems (e.g., SrCoO2.5 , VO2 , WO3 , etc.) has demonstrated important opportunities to incorporate protons through ILG, protonation remains a big challenge for many others. Furthermore, the mechanism of proton intercalation from the ionic liquid/solid interface to whole film has not yet been revealed. Here, with a model system of inverse spinel NiCo2 O4 , an increase in system temperature during ILG forms a single but effective method to efficiently achieve protonation. Moreover, the ILG induces a novel phase transformation in NiCo2 O4 from ferrimagnetic metallic into antiferromagnetic insulating with protonation at elevated temperatures. This study shows that environmental temperature is an efficient tuning knob to manipulate ILG-induced ionic evolution.

Modulating the Electronic Properties of Graphene by Self-Organized Sulfur Identical Nanoclusters and Atomic Superlattices Confined at an Interface.

Ordered atomic-scale superlattices on a surface hold great interest both for basic science and for potential applications in advanced technology. However, controlled fabrication of superlattices down to the atomic scale has proven exceptionally challenging. Here we develop a segregation method to realize self-organization of S superlattices at the interface of graphene and S-rich Cu substrates. Via scanning tunneling microscope measurements, we directly image well-ordered identical nanocluster superlattices and atomic superlattices under the cover of graphene. Scanning tunneling spectra show that the superlattices in turn could modulate the electronic structure of top-layer graphene. Importantly, a special-ordered S monatomic superlattice commensurate with a graphene lattice is found to drive semimetal graphene into a symmetry-broken phase-the electronic Kekulé distortion phase-which opens a bandgap of ∼245 meV.

Prediction of Ideal Topological Semimetals with Triply Degenerate Points in the NaCu_{3}Te_{2} Family.

Triply degenerate points (TDPs) in band structure of a crystal can generate novel TDP fermions without high-energy counterparts. Although identifying ideal TDP semimetals, which host clean TDP fermions around the Fermi level (E_{F}) without coexisting with other quasiparticles, is critical to explore the intrinsic properties of this new fermion, it is still a big challenge and has not been achieved up to now. Here, we disclose an effective approach to search for ideal TDP semimetals via selective band crossing between antibonding s and bonding p orbitals along a line in the momentum space with C_{3v} symmetry. Applying this approach, we have successfully identified the NaCu_{3}Te_{2} family of compounds to be ideal TDP semimetals, where two, and only two, pairs of TDPs are located around the E_{F}. Moreover, we demonstrate a fundamental mechanism to modulate energy splitting between a pair of TDPs, and we illustrate the intrinsic features of TDP Fermi arcs in these ideal TDP semimetals.